sot89 pnp silicon planar medium power transistors issue 3 C february 1996 complementary type C bsr31 C bsr41 BSR33 C bsr43 partmarking details C bsr31 C br2 BSR33 C br4 absolute maximum ratings. parameter symbol bsr31 BSR33 unit collector-base voltage v cbo -70 -90 v collector-emitter voltage v ceo -60 -80 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -65 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base bsr31 breakdown voltage BSR33 v (br)cbo -70 -90 v v i c =-100 m a i c =-100 m a collector-emitter bsr31 breakdown voltage BSR33 v (br)ceo -60 -80 vi c =-10ma i c =-10ma emitter-base breakdown voltage v (br)ebo -5 v i e =-10ma collector cut-off current i cbo -100 -50 na m a v cb =-60v v cb =-60v, t amb =125c collector-emitter saturation voltage v ce(sat) -0.25 -0.5 v v i c =-150ma, i b =-15ma* i c =-500ma, i b =-50ma* base-emitter saturation voltage v be(sat) -1.0 -1.2 v v i c =-150ma, i b =-15ma* i c =-500ma, i b =-50ma* static forward current transfer ratio h fe 30 100 50 300 i c =-100 m a, v ce =-5v* i c =-100ma, v ce =-5v* i c =-500ma, v ce =-5v* collector capacitance c c 20 pf v cb =-10v, f =1mhz emitter capacitance c e 120 pf v eb =-0.5v, f =1mhz transition frequency f t 100 mhz i c =-50ma, v ce =-10v f =35mhz turn-on time t on 500 ns v cc =-20v, i c =-100ma i b1 =-i b2 =-5ma turn-off time t off 650 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device bsr31 BSR33 c c b e sot89 3 - 66
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